Infineon · FETs & Power MOSFETs · MPN IPD26N06S2L35ATMA2
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Output Capacitance(Coss) | 178pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 68W |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| RDS(on) | 35mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 621pF |
| Type | N-Channel |
N-Channel 55V 30A 68W Surface Mount TO-252