Infineon · FETs & Power MOSFETs · MPN IPD25N06S4L-30
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| Gate Charge(Qg) | 12.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 265pF |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 29W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 23mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 935pF |
| Type | N-Channel |
N-Channel 60V 29W Surface Mount TO-252-3