Infineon · FETs & Power MOSFETs · MPN IPD25N06S2-40
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 68W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 40mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 513pF |
55V 29A 4V 68W 40mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS