Infineon · FETs & Power MOSFETs · MPN IPD25DP06NM
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| Gate Charge(Qg) | 10.6nC@30V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 6.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 28W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 250mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 420pF |
60V 6.5A 2.1V 28W 250mΩ@10V 1 P-Channel TO-252-3 Single FETs, MOSFETs RoHS