Infineon · FETs & Power MOSFETs · MPN IPD25DP06LMATMA1
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| Gate Charge(Qg) | 13.8nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 6.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 28W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 310mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 420pF |
| Type | P-Channel |
P-Channel 60V 6.5A 28W Surface Mount TO-252-3-313