Infineon IPD230N06LG

Infineon · FETs & Power MOSFETs · MPN IPD230N06LG

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)42nC@10V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)101pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF

Technical details

60V 30A 2V 100W 23mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS

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