Infineon IPD22N08S2L50ATMA1

Infineon · FETs & Power MOSFETs · MPN IPD22N08S2L50ATMA1

No reviews yet — be the first to review Infineon IPD22N08S2L50ATMA1.

Specifications

Drain to Source Voltage75V
Gate Charge(Qg)33nC@10V
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)50mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)630pF

Technical details

N-Channel 75V 27A 75W Surface Mount TO-252

Related FETs & Power MOSFETs