Infineon · FETs & Power MOSFETs · MPN IPD18DP10LMATMA1
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Output Capacitance(Coss) | 140pF |
| Current - Continuous Drain(Id) | 13.9A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| RDS(on) | 178mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.1nF |
| Type | P-Channel |
100V 13.9A 2V 83W 178mΩ@10V 1 P-Channel P-Channel TO-252-3 Single FETs, MOSFETs RoHS