Infineon IPD160N04LG

Infineon · FETs & Power MOSFETs · MPN IPD160N04LG

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)16mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.2nF

Technical details

40V 30A 2V 31W 16mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS

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