Infineon IPD15N06S2L64ATMA2

Infineon · FETs & Power MOSFETs · MPN IPD15N06S2L64ATMA2

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Specifications

Drain to Source Voltage55V
Gate Charge(Qg)13nC@10V
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation47W
RDS(on)64mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)354pF

Technical details

N-Channel 55V 19A 47W Surface Mount TO-252

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