Infineon · FETs & Power MOSFETs · MPN IPD15N06S2L64ATMA2
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| Drain to Source Voltage | 55V |
|---|---|
| Gate Charge(Qg) | 13nC@10V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 47W |
| RDS(on) | 64mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 354pF |
N-Channel 55V 19A 47W Surface Mount TO-252