Infineon IPD135N08N3GATMA1

Infineon · FETs & Power MOSFETs · MPN IPD135N08N3GATMA1

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)25nC@10V
Output Capacitance(Coss)469pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)469pF
RDS(on)13.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.73nF
TypeN-Channel

Technical details

80V 45A 3.5V 79W 13.5mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS

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