Infineon · FETs & Power MOSFETs · MPN IPD135N08N3GATMA1
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Output Capacitance(Coss) | 469pF |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 79W |
| Reverse Transfer Capacitance (Crss@Vds) | 469pF |
| RDS(on) | 13.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.73nF |
| Type | N-Channel |
80V 45A 3.5V 79W 13.5mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS