Infineon IPD135N03LG

Infineon · FETs & Power MOSFETs · MPN IPD135N03LG

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)13.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1nF
Type-

Technical details

N-Channel 30V 30A 31W Surface Mount TO-252

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