Infineon · FETs & Power MOSFETs · MPN IPD130N10NF2SATMA1
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| Gate Charge(Qg) | 18.6nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 52A |
| Output Capacitance(Coss) | 210pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 71W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
| Type | N-Channel |
100V 52A 3.8V 71W 13mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS