Infineon · FETs & Power MOSFETs · MPN IPD12CN10NGATMA1
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| Gate Charge(Qg) | 65nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 67A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 12.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.32nF |
N-Channel 100V 67A 125W Surface Mount TO-252-3