Infineon · FETs & Power MOSFETs · MPN IPD11DP10NMATMA1
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 74nC@10V |
| Output Capacitance(Coss) | 230pF |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| RDS(on) | 111mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.2nF |
| Type | P-Channel |
P-Channel 100V 22A 125W Surface Mount TO-252