Infineon · FETs & Power MOSFETs · MPN IPD110N12N3 G
No reviews yet — be the first to review Infineon IPD110N12N3 G.
| Gate Charge(Qg) | 65nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.31nF |
N-Channel 120V 75A 136W Surface Mount TO-252-3