Infineon · FETs & Power MOSFETs · MPN IPD096N08N3GATMA1
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 35nC@10V |
| Output Capacitance(Coss) | 652pF |
| Current - Continuous Drain(Id) | 73A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 9.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.41nF |
| Type | N-Channel |
N-Channel 80V 73A 100W Surface Mount TO-252