Infineon IPD090N03LG

Infineon · FETs & Power MOSFETs · MPN IPD090N03LG

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Specifications

Gate Charge(Qg)9.8nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)660pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.6nF

Technical details

N-Channel 30V 40A 42W Surface Mount TO-252

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