Infineon · FETs & Power MOSFETs · MPN IPD079N06L3GBTMA1
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 22nC@4.5V |
| Output Capacitance(Coss) | 690pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 79W |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| RDS(on) | 6.3mΩ@10V;9mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.7nF |
| Type | N-Channel |
N-Channel 60V 50A 79W Surface Mount TO-252-3