Infineon IPD06N03LAG

Infineon · FETs & Power MOSFETs · MPN IPD06N03LAG

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)22nC@5V
Output Capacitance(Coss)1.064nF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)147pF
RDS(on)5.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.653nF
TypeN-Channel

Technical details

25V 50A 2V 83W 5.7mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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