Infineon IPD068P03L3G

Infineon · FETs & Power MOSFETs · MPN IPD068P03L3G

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Specifications

Configuration-
Gate Charge(Qg)91nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)3.14nF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)6.8mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.72nF

Technical details

P-Channel 30V 70A 100W Surface Mount TO-252

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