Infineon IPD060N03LG

Infineon · FETs & Power MOSFETs · MPN IPD060N03LG

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Specifications

Gate Charge(Qg)14.4nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation56W
Reverse Transfer Capacitance (Crss@Vds)52pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.3nF

Technical details

N-Channel 30V 50A 56W Surface Mount TO-252-3

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