Infineon IPD053N08N3G

Infineon · FETs & Power MOSFETs · MPN IPD053N08N3G

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Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)1.28nF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)5.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.75nF
TypeN-Channel

Technical details

N-Channel 80V 90A 150W Surface Mount TO-252

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