Infineon · FETs & Power MOSFETs · MPN IPD052N10NF2SATMA1
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| Gate Charge(Qg) | 76nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 118A |
| Output Capacitance(Coss) | 570pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 5.2mΩ@10V |
| Input Capacitance(Ciss) | 3.6nF |
| Type | N-Channel |
100V 118A 3.8V 150W 5.2mΩ@10V N-Channel TO-252-3 Single FETs, MOSFETs RoHS