Infineon IPD050N03LGATMA1

Infineon · FETs & Power MOSFETs · MPN IPD050N03LGATMA1

No reviews yet — be the first to review Infineon IPD050N03LGATMA1.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)20nC@4.5V
Output Capacitance(Coss)1.2nF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)49pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

N-Channel 30V 50A 68W Surface Mount TO-252

Related FETs & Power MOSFETs