Infineon · FETs & Power MOSFETs · MPN IPD04N03LB G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 40nC@5V |
| Current - Continuous Drain(Id) | 50A |
| Output Capacitance(Coss) | 1.9nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF |
| RDS(on) | 6mΩ@4.5V |
| Input Capacitance(Ciss) | 5.2nF |
| Type | N-Channel |
30V 50A 2V 115W 6mΩ@4.5V N-Channel TO-252-3-11 Single FETs, MOSFETs RoHS