Infineon · FETs & Power MOSFETs · MPN IPD048N06L3 G
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| Gate Charge(Qg) | 37nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.1nF |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.3nF |
| Type | N-Channel |
60V 90A 1.7V 115W 3.7mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS