Infineon · FETs & Power MOSFETs · MPN IPD046N08N5
No reviews yet — be the first to review Infineon IPD046N08N5.
| Gate Charge(Qg) | 53nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 4.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.8nF |
80V 90A 2.2V 125W 4.6mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS