Infineon IPD042P03L3 G

Infineon · FETs & Power MOSFETs · MPN IPD042P03L3 G

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Specifications

Gate Charge(Qg)131nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)3.5mΩ@10V;4.6mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 30V 150W Surface Mount TO-252-3

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