Infineon · FETs & Power MOSFETs · MPN IPD042P03L3 G
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| Gate Charge(Qg) | 131nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 3.5mΩ@10V;4.6mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | P-Channel |
P-Channel 30V 150W Surface Mount TO-252-3