Infineon IPD040N03L G

Infineon · FETs & Power MOSFETs · MPN IPD040N03L G

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.9nF

Technical details

30V 90A 1V 79W 4mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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