Infineon IPD03N03LA G

Infineon · FETs & Power MOSFETs · MPN IPD03N03LA G

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)41nC@5V
Current - Continuous Drain(Id)90A
Output Capacitance(Coss)2nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation115W
RDS(on)3.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)260pF
Input Capacitance(Ciss)5.2nF
TypeN-Channel

Technical details

25V 90A 2V 115W 3.2mΩ@10V N-Channel PG-TO252-3-11 Single FETs, MOSFETs RoHS

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