Infineon · FETs & Power MOSFETs · MPN IPD03N03LA G
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| Drain to Source Voltage | 25V |
|---|---|
| Gate Charge(Qg) | 41nC@5V |
| Current - Continuous Drain(Id) | 90A |
| Output Capacitance(Coss) | 2nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 115W |
| RDS(on) | 3.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF |
| Input Capacitance(Ciss) | 5.2nF |
| Type | N-Channel |
25V 90A 2V 115W 3.2mΩ@10V N-Channel PG-TO252-3-11 Single FETs, MOSFETs RoHS