Infineon IPD038N06N3G

Infineon · FETs & Power MOSFETs · MPN IPD038N06N3G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation188W
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)3.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8nF

Technical details

N-Channel 60V 90A 188W Surface Mount TO-252

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