Infineon IPD036N04L G

Infineon · FETs & Power MOSFETs · MPN IPD036N04L G

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Specifications

Gate Charge(Qg)78nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.3nF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation94W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)3.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.3nF
TypeN-Channel

Technical details

N-Channel 40V 90A 94W Surface Mount TO-252

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