Infineon IPD031N03LG

Infineon · FETs & Power MOSFETs · MPN IPD031N03LG

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)51nC@10V
Output Capacitance(Coss)1.9nF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation94W
Reverse Transfer Capacitance (Crss@Vds)81pF
RDS(on)3.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.3nF
TypeN-Channel

Technical details

N-Channel 30V 90A 94W Surface Mount TO-252

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