Infineon · FETs & Power MOSFETs · MPN IPD029N04NF2SATMA1
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| Gate Charge(Qg) | 68nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 131A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 107W |
| RDS(on) | 2.9mΩ@10V |
| Type | N-Channel |
40V 131A 3.4V 107W 2.9mΩ@10V N-Channel TO-252-3 Single FETs, MOSFETs RoHS