Infineon · FETs & Power MOSFETs · MPN IPD028N06NF2SATMA1
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| Gate Charge(Qg) | 102nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1nF |
| Current - Continuous Drain(Id) | 139A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.6nF |
| Type | N-Channel |
60V 139A 3.3V 150W 2.5mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS