Infineon IPD023N04NF2SATMA1

Infineon · FETs & Power MOSFETs · MPN IPD023N04NF2SATMA1

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)68nC@10V
Output Capacitance(Coss)1.8nF
Current - Continuous Drain(Id)143A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation150W
RDS(on)2.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)98pF
Input Capacitance(Ciss)4.8nF
TypeN-Channel

Technical details

N-Channel 40V 143A 150W Surface Mount TO-252-3

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