Infineon · FETs & Power MOSFETs · MPN IPC50N04S55R8ATMA1
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 305pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 7.2mΩ@7V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.09nF |
| Type | N-Channel |
N-Channel 40V 50A 42W Surface Mount TDSON-8