Infineon IPC26N12N

Infineon · FETs & Power MOSFETs · MPN IPC26N12N

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage120V
Current - Continuous Drain(Id)2A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number-
Input Capacitance(Ciss)-

Technical details

120V 2A 4V Single FETs, MOSFETs RoHS

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