Infineon IPC100N04S5L1R9ATMA1

Infineon · FETs & Power MOSFETs · MPN IPC100N04S5L1R9ATMA1

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Specifications

Gate Charge(Qg)81nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)970pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.31nF
TypeN-Channel

Technical details

N-Channel 40V 100A 100W Surface Mount TDSON-8

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