Infineon IPC100N04S5-1R9

Infineon · FETs & Power MOSFETs · MPN IPC100N04S5-1R9

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)760pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)1.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

N-Channel 40V 100W Surface Mount TDSON-8

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