Infineon · FETs & Power MOSFETs · MPN IPC100N04S5-1R7
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 1.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.62nF |
40V 100A 2.8V 115W 1.4mΩ@10V 1 N-channel TDSON-8(6.2x5.2) Single FETs, MOSFETs RoHS