Infineon · FETs & Power MOSFETs · MPN IPBE65R115CFD7A
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 114W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 103mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.95nF |
650V 21A 4V 114W 103mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS