Infineon · FETs & Power MOSFETs · MPN IPBE65R075CFD7AATMA1
No reviews yet — be the first to review Infineon IPBE65R075CFD7AATMA1.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 68nC@10V |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 171W |
| RDS(on) | 75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.288nF |
650V 32A 4.5V 171W 75mΩ@10V 1 N-channel TO-263-7-3-10 Single FETs, MOSFETs RoHS