Infineon · FETs & Power MOSFETs · MPN IPBE65R050CFD7AATMA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 102nC@10V |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 227W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.712nF |
| RDS(on) | 50mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.975nF |
650V 45A 4.5V 227W 50mΩ@10V 1 N-channel TO-263-7-3-10 Single FETs, MOSFETs RoHS