Infineon · FETs & Power MOSFETs · MPN IPB95R450PFD7ATMA1
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| Gate Charge(Qg) | 43nC@10V |
|---|---|
| Drain to Source Voltage | 950V |
| Current - Continuous Drain(Id) | 13.3A |
| Output Capacitance(Coss) | 17pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 104W |
| RDS(on) | 350mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.23nF |
950V 13.3A 3V 104W 350mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS