Infineon IPB95R310PFD7ATMA1

Infineon · FETs & Power MOSFETs · MPN IPB95R310PFD7ATMA1

No reviews yet — be the first to review Infineon IPB95R310PFD7ATMA1.

Specifications

Gate Charge(Qg)61nC@10V
Drain to Source Voltage950V
Output Capacitance(Coss)23pF
Current - Continuous Drain(Id)17.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation125W
Number1 N-channel
Input Capacitance(Ciss)1.765nF

Technical details

950V 17.5A 3V 125W 1 N-channel D2PAK Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs