Infineon · FETs & Power MOSFETs · MPN IPB95R130PFD7ATMA1
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| Drain to Source Voltage | 950V |
|---|---|
| Gate Charge(Qg) | 141nC@10V |
| Output Capacitance(Coss) | 53pF |
| Current - Continuous Drain(Id) | 36.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 227W |
| RDS(on) | 130mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.17nF |
950V 36.5A 227W Surface Mount TO-263-3