Infineon IPB80P04P4L-08

Infineon · FETs & Power MOSFETs · MPN IPB80P04P4L-08

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Specifications

Gate Charge(Qg)92nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)6.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.43nF

Technical details

40V 80A 2.2V 75W 6.5mΩ@10V 1 P-Channel TO-263-3 Single FETs, MOSFETs RoHS

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