Infineon IPB80P03P4L-07

Infineon · FETs & Power MOSFETs · MPN IPB80P03P4L-07

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Specifications

Configuration-
Gate Charge(Qg)80nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)6.9mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.7nF

Technical details

30V 80A 1V 88W 6.9mΩ@10V 1 P-Channel TO-263-3 Single FETs, MOSFETs RoHS

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